DocumentCode
1371530
Title
Continuous wave operation of type-II interband cascade lasers
Author
Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E. ; Yang, R.Q.
Author_Institution
US Army Res. Lab., Adelphi, MD, USA
Volume
147
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
177
Lastpage
180
Abstract
Continuous wave operation of interband cascade lasers based on type-II InAs/Ga(In)Sb heterostructures is reported. The interband cascade lasers, consisting of 23 cascaded active regions, lased at wavelengths near 4 μm. Continuous wave operation was observed from 60-110 μm wide by 1.02 mm long mesa-stripe lasers at temperatures up to 70 K
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; 1.02 mm; 4 mum; 60 to 110 mum; 70 K; InAs; InAs-GaInSb; InAs-GaSb; InAs-InSb; InAs/Ga(In)Sb heterostructures; cascaded active regions; continuous wave operation; interband cascade lasers; mesa-stripe lasers; type-II heterostructures; type-II interband cascade lasers; wavelengths;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20000299
Filename
860911
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