• DocumentCode
    1371530
  • Title

    Continuous wave operation of type-II interband cascade lasers

  • Author

    Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E. ; Yang, R.Q.

  • Author_Institution
    US Army Res. Lab., Adelphi, MD, USA
  • Volume
    147
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    Continuous wave operation of interband cascade lasers based on type-II InAs/Ga(In)Sb heterostructures is reported. The interband cascade lasers, consisting of 23 cascaded active regions, lased at wavelengths near 4 μm. Continuous wave operation was observed from 60-110 μm wide by 1.02 mm long mesa-stripe lasers at temperatures up to 70 K
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; 1.02 mm; 4 mum; 60 to 110 mum; 70 K; InAs; InAs-GaInSb; InAs-GaSb; InAs-InSb; InAs/Ga(In)Sb heterostructures; cascaded active regions; continuous wave operation; interband cascade lasers; mesa-stripe lasers; type-II heterostructures; type-II interband cascade lasers; wavelengths;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20000299
  • Filename
    860911