Title :
Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC
Author :
Shi, Yan ; Luo, Yanbin ; Campi, J. ; Yan, Feng ; Lee, Yong K. ; Zhao, Jian H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
4/2/1998 12:00:00 AM
Abstract :
The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported
Keywords :
annealing; oxidation; silicon compounds; wide band gap semiconductors; 400 to 600 C; 6H-SiC; PMA; SiC; SiO2; effective fixed charge; post-metallisation annealing; thermally grown oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980444
