Title :
Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors
Author :
Virmontois, Cedric ; Goiffon, V. ; Magnan, P. ; Saint-Pé, O. ; Girard, S. ; Petit, S. ; Rolland, G. ; Bardoux, A.
Author_Institution :
ISAE, Univ. de Toulouse, Toulouse, France
Abstract :
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
Keywords :
CMOS image sensors; ionisation; telegraphy; CMOS image sensors; dark current random telegraph signals; displacement damage dose; microscopic origins; total ionizing dose; Active pixel sensors; CMOS image sensors; Dark current; Integrated circuits; Neutrons; Protons; Radiation effects; Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage dose (DDD); hot pixels; monolithic active pixel sensor (MAPS); random telegraph signal RTS); total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171005
