• DocumentCode
    1371876
  • Title

    Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

  • Author

    Virmontois, Cedric ; Goiffon, V. ; Magnan, P. ; Saint-Pé, O. ; Girard, S. ; Petit, S. ; Rolland, G. ; Bardoux, A.

  • Author_Institution
    ISAE, Univ. de Toulouse, Toulouse, France
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    3085
  • Lastpage
    3094
  • Abstract
    Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
  • Keywords
    CMOS image sensors; ionisation; telegraphy; CMOS image sensors; dark current random telegraph signals; displacement damage dose; microscopic origins; total ionizing dose; Active pixel sensors; CMOS image sensors; Dark current; Integrated circuits; Neutrons; Protons; Radiation effects; Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage dose (DDD); hot pixels; monolithic active pixel sensor (MAPS); random telegraph signal RTS); total ionizing dose (TID);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2171005
  • Filename
    6072297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1371876