LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model and its application to power IC TCAD

Author

Chung, Y.

Author_Institution

Samsung Electron. Co. Ltd., Kyunggi, South Korea

Volume

147

Issue

4

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

219

Lastpage

227

Abstract

A circuit simulation program (LADISPICE: LAteral Dmos transistor SPICE) has been developed for simulation and optimisation of power ICs which combine high-power lateral double-diffused MOS transistors with low-voltage logic and control elements on the same chip. This is a development of a previous static model and involves a charge-based dynamic model and a parasitic bipolar junction transistor model. These models have been incorporated into SPICE2G.6 source code and the paper demonstrates the excellent results. This new software represents an effective TCAD tool for the design and simulation of LDMOST power ICs

Keywords

SPICE; circuit CAD; circuit optimisation; circuit simulation; equivalent circuits; power MOSFET; power integrated circuits; semiconductor device models; technology CAD (electronics); LADISPICE-1.2; LDMOST power ICs; SPICE2G.6 source code; charge-based dynamic model; circuit simulation program; control elements; double-diffused MOS transistors; high-power MOSTs; lateral DMOS transistor model; low-voltage logic; nonplanar-drift LDMOS transistor model; optimisation; parasitic BJT model; parasitic bipolar junction transistor; power IC TCAD application;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20000411

Filename

861413