DocumentCode :
1372154
Title :
1.3- 
m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process
Author :
Xu, D.W. ; Yoon, S.F. ; Ding, Y. ; Tong, C.Z. ; Fan, W.J. ; Zhao, L.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
23
Issue :
2
fYear :
2011
Firstpage :
91
Lastpage :
93
Abstract :
We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; surface emitting lasers; In(Ga)As; dielectric free approach; fundamental mode; quantum dot VCSEL; quantum dot vertical-cavity surface-emitting laser; small signal modulation response; surface relief process; wavelength 1.3 mum; Apertures; Modulation; Strontium; Surface resistance; Surface treatment; Vertical cavity surface emitting lasers; Dielectric-free approach; quantum dot (QD); surface-relief technique; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2091269
Filename :
5624566
Link To Document :
