Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

Author

Tanabe, Akihito ; Kudoh, Yoshiharu ; Kawakami, Yukiya ; Masubuchi, Kouichi ; Kawai, Sin´ichi ; Yamada, Toru ; Morimoto, Michihiro ; Arai, Kouichi ; Hatano, Keisuke ; Furumiya, Masayuki ; Naliashiba, Y. ; Mutoh, Nobuhiko ; Orihara, Kozo ; Teranishi, Nobuka

Author_Institution

Silicon Syst. Res. Lab., NEC Corp., Kanagawa, Japan

Volume

47

Issue

9

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

1700

Lastpage

1706

Abstract

Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order to improve dynamic range in small pixel interline-transfer CCD (IT-CCD) image sensors. The new technologies have been applied to a progressive-scan IT-CCD image sensor with 5 μm square pixels and have (1) increased the charge handling capability of its V-CCDs to 4500 electrons/V; (2) improved its smear value to -95 dB; and (3) increased the saturation charge of its PDs to 2.3×10⁴ electrons

Keywords

CCD image sensors; photodiodes; charge handling; dynamic range; narrow channel effect suppression; photodiode; progressive-scan IT-CCD image sensor; saturation charge; small pixel IT-CCD image sensor; smear reduction; vertical CCD; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Image resolution; Image sensors; Knee; Laboratories; Photodiodes; Pixel;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.861580

Filename

861580