Title :
Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs
Author :
Quinones, Eduardo Jose ; John, Soji ; Ray, Samit K. ; Banerjee, Sanjay Kumar
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
9/1/2000 12:00:00 AM
Abstract :
We present the evaluation of the strain-stabilizing capabilities of C in the Si1-xGex system. To demonstrate these effects, we have designed Si1-x-yGexCy heterojunction PMOSFET devices over a range of Ge concentrations, with thicknesses that would typically result in related or metastable films under normal processing conditions. The dc characteristics of Si1-x-yGexCy, SiCe, and Si PMOSFETs (L=10 μm) were evaluated at room temperature and at 77 K. In general, the saturation mobility in Si1-x-yGexCy devices is higher than that of Si1-xGex and Si devices at low gate bias and room temperature. This enhancement is attributed to the strain stabilization effect of C. With proper optimization of Ge and C concentrations, it is possible to fabricate devices with significant improvements in drive current under normal operating conditions (0-3 V, 300 K). This application of Si1-x-y GexCy in PMOSFETs demonstrates the potential benefits of using of C in the Column IV heterostructure system
Keywords :
Ge-Si alloys; MOSFET; semiconductor materials; DC characteristics; SiGeC; SiGeC heterojunction PMOSFET; drive current; saturation mobility; strain stabilization; Capacitive sensors; Fabrication; Germanium alloys; Heterojunction bipolar transistors; MOSFETs; Photonic band gap; Semiconductor films; Silicon alloys; Strain measurement; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
