DocumentCode :
1372346
Title :
Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equation
Author :
Tang, Ting-wei ; Gan, Haitao
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
47
Issue :
9
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
1726
Lastpage :
1732
Abstract :
Two different formulations of semiconductor transport models based on the spherical harmonic expansion of the Boltzmann transport equation are presented. In the one-dimensional (1-D) case, macroscopic transport coefficients are defined through Legendre components of the distribution function. Although either formulation is permissible, the modeling of transport coefficients in one of the formulations is more tractable than the other. The validity of the Einstein and other relations are also examined. The two different transport formulations are then applied to the hydrodynamic simulation of an n+-n-n+ structure and results are compared with the Monte Carlo simulation data
Keywords :
Boltzmann equation; Monte Carlo methods; semiconductors; Boltzmann transport equation; Einstein relation; Legendre components; Monte Carlo simulation; distribution function; hydrodynamic simulation; n+-n-n+ structure; one-dimensional model; semiconductor; spherical harmonic expansion; transport coefficient; Boltzmann equation; Current density; Differential equations; Distribution functions; Electrons; Gallium nitride; High definition video; Hydrodynamics; Integral equations; Polynomials;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.861583
Filename :
861583
Link To Document :
بازگشت