Title :
Characterization of reverse leakage components for ultrashallow p+/n diodes fabricated using gas immersion laser doping
Author :
Kramer, K.-J. ; Talwar, S. ; McCarthy, A.M. ; Weiner, K.H.
Author_Institution :
Ultratech Stepper Corp., San Jose, CA, USA
Abstract :
We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of 39 nm and 50 nm, surface concentrations exceeding 10/sup 20/ atoms/cm3, and sheet resistances less than 160 /spl Omega///spl square/ are presented. Values for area, perimeter, and corner leakage currents are measured at less than 1.6 nA/cm2, 2.5 fA/μm and 10 fA/corner respectively, at 3.4 V reverse bias. These characteristics demonstrate that the laser doping process is viable for source/drain doping in 0.18 μm CMOS technology.
Keywords :
CMOS integrated circuits; laser materials processing; leakage currents; semiconductor diodes; semiconductor doping; 0.18 micron; 3.4 V; 39 nm; 50 nm; CMOS technology; fabrication; gas immersion laser doping; reverse leakage components; source/drain doping; ultrashallow p+/n diodes; Area measurement; Atomic beams; Atomic measurements; CMOS technology; Diodes; Doping; Gas lasers; Leakage current; Optical device fabrication; Statistics;
Journal_Title :
Electron Device Letters, IEEE
