• DocumentCode
    1372484
  • Title

    Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1 \\mu\\hbox {m} Wavelength

  • Author

    Kämpfe, Thomas ; Tonchev, Svetlen ; Gomard, Guillaume ; Seassal, Christian ; Parriaux, Olivier

  • Author_Institution
    Lab. Hubert Curien, Univ. de Lyon, St. Etienne, France
  • Volume
    3
  • Issue
    6
  • fYear
    2011
  • Firstpage
    1142
  • Lastpage
    1148
  • Abstract
    Dedicated photolithographic and reactive ion etching processes applied to the plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon layers of solar cells have been developed in the objective of the low-cost manufacturing of efficient, depth-limited subwavelength gratings transforming a linearly polarized beam into a radially and azimuthally polarized beam in the 1.0-1.1-μm wavelength range.
  • Keywords
    elemental semiconductors; holmium compounds; holography; photolithography; silicon; solar cells; sputter etching; 0th-order polarization elements; depth imited subwavelength gratings; hydrogenated amorphous silicon microstructuring; photolithography; plasma enhanced chemical vapor deposition; reactive ion etching; solar cells; wavelength 1.0 mum to 1.1 mum; Etching; Fabrication; Gratings; Indexes; Laser beams; Resists; Substrates; Holography; image analysis;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2011.2175444
  • Filename
    6074913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1372484