• DocumentCode
    1372653
  • Title

    InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor

  • Author

    Chen, C.L. ; Mahoney, L.J. ; Brown, E.R.

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA, USA
  • Volume
    17
  • Issue
    10
  • fYear
    1996
  • Firstpage
    476
  • Lastpage
    478
  • Abstract
    An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an fT as high as 42 GHz. An explanation for a new kink effect is also proposed.
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor superlattices; 0.7 micron; 2 V; 42 GHz; InP; SIGFET; field-effect transistor; gate current reduction; insulated-gate FET; kink effect; normally-off device; self-aligned implant process; superlattice IGFET; Etching; FETs; Implants; Indium compounds; Indium phosphide; Metallization; Microwave devices; Millimeter wave communication; Millimeter wave transistors; Optical amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.537080
  • Filename
    537080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1372653