Title :
8 W continuous wave operation of InGaAsN lasers at 1.3 μm
Author :
Livshits, D.A. ; Egorov, A.Yu. ; Riechert, H.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad of Sci., St. Petersburg, Russia
fDate :
8/3/2000 12:00:00 AM
Abstract :
The authors report on the generation of 8 W of optical power at 1.3 μm under continuous wave (CW) operation from a 100 μm aperture of an InGaAsN single quantum well laser. The laser was facet-coated and the active region maintained at 10°C by heatsinking. A preliminary lifetime test produced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5 W. Threshold current densities as low as 335 A/cm2 were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the InGaAsN material system
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 1.3 mum; 1.5 W; 10 C; 100 mum; 1000 h; 8 W; CW operation; InGaAsN; InGaAsN lasers; InGaAsN material system; InGaAsN single quantum well laser; active region; broad area lasers; continuous wave operation; facet-coated laser; heatsinking; laser characteristics; lasers; lifetime test; optical power; output power; single quantum well laser; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000966
