Title :
Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
Author :
Ryu, Sang-Wan ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
8/3/2000 12:00:00 AM
Abstract :
Low threshold current density GaAsSb/GaAs quantum well (QW) lasers were realised by metal organic chemical vapour deposition. A record low threshold current density of 190 A/cm2 was obtained from a 2.2 mm long broad area laser with the emission wavelength of 1.19 μm
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; laser beams; optical fabrication; quantum well lasers; 1.19 mum; 2.2 mm; GaAs; GaAs substrates; GaAsSb; GaAsSb quantum well lasers; GaAsSb-GaAs; GaAsSb/GaAs quantum well lasers; current density; emission wavelength; long broad area laser; low threshold current density; low threshold current density quantum well lasers; metal organic chemical vapour deposition; quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000853
