InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

Author

Daumann, W. ; Ellrodt, P. ; Brockerhoff, W. ; Bertenburg, R. ; Reuter, R. ; Auer, U. ; Molls, W. ; Tegude, F.J.

Author_Institution

Dept. of Solid-State Electron., Gerhard-Mercator Univ., Duisburg, Germany

Volume

17

Issue

10

fYear

1996

Firstpage

488

Lastpage

490

Abstract

InAlAs/InGaAs dual-gate-HFETs (DGHFETs) and single-gate-HFETs (SGHFETs) have been fabricated and characterized with special emphasis on reducing the impact ionization. For the first time it is shown that in the case of the DGHFET, due to the second gate (V/sub G2S/=0 V), impact ionization can be totally prevented in the channel underneath the RF-driven gate without reduction of the RF-relevant parameters such as transconductance, output resistance and voltage gain. The electric field and the potential distribution in the channel are discussed using a nomogram and confirmed by 2-D simulation. According to V/sub G2S/=0 V, a new cascode design is presented by directly connecting the second gate to the source (ground).

Keywords

III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; impact ionisation; indium compounds; leakage currents; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 100 GHz; 2D simulation; HFET; InAlAs-InGaAs-InP; cascode design; channel electric field; channel potential distribution; dual-gate devices; impact ionization suppression; output resistance; single-gate devices; transconductance; voltage gain; Electric resistance; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Joining processes; MODFETs; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.537084

Filename

537084