Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

Author

Gonzalez-Velo, Yago ; Boch, Jérôme ; Saigné, Frédéric ; Roche, Nicolas J -H ; Pérez, Stephanie ; Vaillé, Jean-Roch ; Deneau, Christelle ; Dusseau, Laurent ; Lorfèvre, Eric ; Schrimpf, Ronald D. ; Chatry, Christian ; Legoulven, Enoal ; Platteter, Dale G.

Author_Institution

Univ. Montpellier 2, Montpellier, France

Volume

58

Issue

6

fYear

2011

Firstpage

2953

Lastpage

2960

Abstract

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N_ot and N_it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.

Keywords

bipolar transistors; interface states; life testing; p-n heterojunctions; ELDRS mechanisms; accelerated test technique; dose rate switching experiments; enhanced low-dose-rate sensitivity; gated lateral PNP transistors; Bipolar transistors; Degradation; Logic gates; Radiation effects; Sensitivity analysis; Switching circuits; Bipolar devices; ELDRS; interface trapped charge; oxide trapped charge; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2170707

Filename

6074973