Title :
Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO2 multilayer reflector
Author :
Yoon, Giwan ; Park, Jae-Don
Author_Institution :
Information & Commun. Univ., Taejon, South Korea
fDate :
8/3/2000 12:00:00 AM
Abstract :
A ZnO-based film bulk acoustic resonator (FBAR) with a W/SiO2 multilayer reflector has been fabricated using a two-step ZnO deposition. The FAR showed a large return loss of 35 dB at ~2 GHz and a high quality factor (high-Q) of ~4000. The resonance characteristics depended largely on the multilayer reflector and ZnO film
Keywords :
Q-factor; acoustic resonators; acoustic wave reflection; bulk acoustic wave devices; piezoelectric thin films; silicon compounds; tungsten; zinc compounds; 2 GHz; 35 dB; W-SiO2; W/SiO2 multilayer reflector; ZnO; ZnO film bulk acoustic resonator device; fabrication; quality factor; return loss; two-step deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000986
