A 40–67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP

Author

Junlei Zhao ; Bassi, Matteo ; Bevilacqua, Andrea ; Ghilioni, Andrea ; Mazzanti, Andrea ; Svelto, Francesco

Author_Institution

Dept. of Ind. & Inf. Eng., Univ. of Pavia, Pavia, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

179

Lastpage

182

Abstract

A design methodology for interstage and output matching networks for wide-band Power Amplifiers for wireless applications is proposed. Leveraging wideband inductively coupled resonators, we apply Norton transformations for impedance matching. A two-stage differential PA with neutralized common source stages has been realized in 28 nm CMOS using low-power devices. The PA delivers 13 dBm saturated output power over 40-67GHz bandwidth with a peak power-added efficiency of 16% without power combining. To the best of author´s knowledge, the presented PA shows state-of-the art performances with the largest fractional bandwidth among mm-wave PAs reported so far.

Keywords

CMOS analogue integrated circuits; differential amplifiers; field effect MIMIC; impedance matching; low-power electronics; millimetre wave power amplifiers; millimetre wave resonators; wideband amplifiers; CMOS LP; Norton transformations; PAE; PSAT; efficiency 16 percent; frequency 40 GHz to 67 GHz; impedance matching; low-power devices; mm-wave PAs; neutralized common source stages; output matching networks; size 28 nm; two-stage differential PA; wideband inductively coupled resonators; wideband power amplifiers; wireless applications; Bandwidth; CMOS integrated circuits; Gain; Impedance; Impedance matching; Inductors; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th

Conference_Location

Venice Lido

ISSN

1930-8833

Print_ISBN

978-1-4799-5694-4

Type

conf

DOI

10.1109/ESSCIRC.2014.6942051

Filename

6942051