Batch transfer integration of RF microrelays

Author

Milanovic, Veljko ; Maharbiz, Michel ; Pister, Kristofer S J

Author_Institution

Sensor & Actuator Center, California Univ., Berkeley, CA, USA

Volume

10

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

313

Lastpage

315

Abstract

This letter presents the first implementation of batch-transferred microrelays for a broad range of RF applications and substrates. The transferred relays include two types of electrostatic pull-down structures for series and shunt switching of a CPW. The batch-transfer methodology allows integration of optimized microelectromechanical systems (MEMS) in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of <0.3 dB, and isolation better than 15 dB at frequencies from 100 MHz to 50 GHz are demonstrated, as well as shunt switches with >45 dB of isolation and <0.3 dB insertion loss in that frequency range

Keywords

coplanar waveguide components; electrostatic actuators; flip-chip devices; losses; microwave switches; semiconductor relays; 100 MHz to 50 GHz; Al₂O₃; CPW; GaAs; RF microrelays; batch transfer integration; electrostatic pull-down structures; insertion loss; isolation; optimized microelectromechanical systems; series switching; shunt switching; Coplanar waveguides; Electrostatics; Gallium arsenide; Insertion loss; Microelectromechanical systems; Micromechanical devices; Microrelays; Optimization methods; Radio frequency; Relays;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.862225

Filename

862225