Title :
A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C
Author :
Medra, Ahmed ; Giannini, V. ; Guermandi, D. ; Wambacq, Piet
Author_Institution :
imec, Heverlee, Belgium
Abstract :
This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; low noise amplifiers; millimetre wave integrated circuits; millimetre wave power amplifiers; road vehicle radar; LNA; PAE; automotive radars; efficiency 13.8 percent; frequency 79 GHz; gain 17 dB; gain 23.8 dB; multistage common source neutralized push-pull topology; noise figure 4.9 dB; power added efficiency; power amplifier; scaled CMOS technology; size 28 nm; temperature 27 degC to 125 degC; variable gain low-noise amplifier; Automotive engineering; CMOS integrated circuits; CMOS technology; Gain; Noise measurement; Power amplifiers; Radar; 79GHz CMOS LNA; 79GHz CMOS PA; Automotive Radar; Spillover; Variable gain;
Conference_Titel :
European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th
Conference_Location :
Venice Lido
Print_ISBN :
978-1-4799-5694-4
DOI :
10.1109/ESSCIRC.2014.6942052
