Title :
UV laser-assisted multiple evanescent waves lithography for near-field nanopatterning
Author :
Chua, J.K. ; Murukeshan, V.M.
Author_Institution :
Sch. of Mech. & Aerosp. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A single exposure multiple evanescent waves interference lithography approach for patterning of nanoscale two-dimensional (2D) features is described and illustrated theoretically and experimentally in this Letter. Sub-70 nm (?? 0.19 ) full-width at half-maximum (FWHM) 2D features, with a pitch size smaller than ??/2, are fabricated by exposing conventional positive tone UV photoresist to the interference between four counter-propagating evanescent waves, which are generated by total internal reflection of polarised incident beams. The effects of polarisation and exposure duration are also investigated.
Keywords :
light interference; light polarisation; nanopatterning; photoresists; refractive index; UV laser-assisted multiple evanescent waves lithography; conventional positive tone UV photoresist; four counter-propagating evanescent waves; multiple evanescent waves interference lithography approach; nanoscale two-dimensional features; near-field nanopatterning; pitch size; polarisation effects; polarised incident beams; refractive index; total internal reflection;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2009.0082