DocumentCode
1373424
Title
The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons
Author
Seifert, Norbert ; Gill, Balkaran ; Pellish, Jonathan A. ; Marshall, Paul W. ; LaBel, Kenneth A.
Author_Institution
Intel Corp., Hillsboro, OR, USA
Volume
58
Issue
6
fYear
2011
Firstpage
2711
Lastpage
2718
Abstract
We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate that at proton energies where direct ionization dominates, critical charge (Qcrit) plays a far bigger role than at proton energies above the nuclear reaction threshold.
Keywords
CMOS integrated circuits; error statistics; ionisation; proton effects; bulk CMOS latch susceptibility; bulk CMOS technologies; critical charge; direct ionization; low-energy proton radiation induced soft error rates; nuclear reaction threshold; reduced-SER latches; sequential logic elements; size 32 nm; size 45 nm; Aluminum; Latches; Particle beams; Protons; Silicon on insulator technology; Voltage measurement; Logic; SER; protons; radiation; single event; soft error;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2171004
Filename
6075300
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