Stable operation (over 5000 h) of high-power 0.98- mu m InGaAs-GaAs strained quantum well ridge waveguide lasers for pumping Er/sup 3+/-doped fiber amplifiers

Author

Okayasu, Masanobu ; Fukuda, Mitsuo ; Takeshita, Tatsuya ; Uehara, Shingo

Author_Institution

NTT Opto-Electron. Lat., Kanagawa, Japan

Volume

2

Issue

10

fYear

1990

Firstpage

689

Lastpage

691

Abstract

A maximum output power of 115 mW and a slope efficiency of 0.92 W/A have been achieved in 0.98- mu m InGaAs strained quantum well lasers with a 3- mu m-wide ridge waveguide structure for efficient fiber coupling. Stable operation of over 5000 h under 50 degrees C constant power operation with an optical power density of 3.9 MW/cm/sup 2/ has been demonstrated with a degradation rate as low as 5*10/sup -6/ per hour. These results show that this device is promising as a practical pumping source for Er/sup 3+/-doped fiber optical amplifiers.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; life testing; optical pumping; optical testing; optical waveguides; semiconductor device testing; semiconductor junction lasers; 0.98 micron; 115 mW; 3 micron; 50 degC; 5000 hrs; Er/sup 3+/-doped fiber amplifiers; InGaAs-GaAs strained quantum well ridge waveguide lasers; constant power operation; degradation rate; efficient fiber coupling; maximum output power; optical power density; practical pumping source; slope efficiency; Degradation; Fiber lasers; Indium gallium arsenide; Optical coupling; Optical pumping; Optical waveguides; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60760

Filename

60760