Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching

Author

Jost, M. ; Bona, G.L. ; Buchmann, P. ; Sasso, G. ; Vettiger, P. ; Webb, D.

Author_Institution

Div. of IBM Res. Ruschlikon, Switzerland

Volume

2

Issue

10

fYear

1990

Firstpage

697

Lastpage

698

Abstract

Optical storage applications for AlGaAs power lasers require single-mode laser operation and well-controlled beam divergence. For AlGaAs GRIN separate confinement heterostructure (GRINSCH) ridge lasers, these optical characteristics are sensitive to the precise ridge geometry of the laser. Directional reactive ion etching with Cl/sub 2/ and in situ monitoring of the etch with highly attenuated laser interferometry provide the excellent process control required during formation of the ridge. The process is described, and results are presented for lasers that were fabricated using this technique.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical workshop techniques; semiconductor junction lasers; semiconductor technology; sputter etching; AlGaAs power lasers; Cl/sub 2/; GRIN separate confinement heterostructure; attenuated laser interferometry; in situ monitoring; process control; reactive ion etching; ridge lasers; Etching; Geometrical optics; Laser beams; Monitoring; Optical attenuators; Optical interferometry; Optical sensors; Particle beam optics; Power lasers; Process control;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60763

Filename

60763