DocumentCode
1373529
Title
Short pulse gain saturation in InGaAsP diode laser amplifiers
Author
Lai, Y. ; Hall, K.L. ; Ippen, E.P. ; Eisenstein, G.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Volume
2
Issue
10
fYear
1990
Firstpage
711
Lastpage
713
Abstract
The saturation behavior of InGaAsP optical amplifiers is studied for input pulsewidths of 15 ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A simple rate equation model based on pump-probe results predicts the observed pulsewidth-dependent saturation behavior.<>
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical saturation; semiconductor junction lasers; 15 ps; 150 fJ; 150 ps; 40 fJ; InGaAsP diode laser; gain saturation; input pulsewidths; laser amplifiers; optical amplifiers; output saturation energies; pulsewidth-dependent saturation behavior; pump-probe results; rate equation model; Diode lasers; Energy measurement; Equations; Optical amplifiers; Optical pulses; Optical pumping; Optical saturation; Pulse amplifiers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.60768
Filename
60768
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