A new technique for fabrication of OEICs-the etched back planar process-and its application to the fabrication of planar embedded InP-InGaAs p-i-n photodiodes

Author

Shimizu, J. ; Inomoto, Y. ; Kida, N. ; Terakado, T. ; Suzuki, A.

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

2

Issue

10

fYear

1990

Firstpage

721

Lastpage

723

Abstract

The etched back planar process utilizes a nonselective reactive ion beam etching (RIBE) technique both for semiconductor layers and for photoresist. Application of the technique to the fabrication of a planar InP-InGaAs embedded p-i-n photodiode is discussed. The groove depth on the wafer was reduced from 5.3 mu to 0.6 mu m, and the wafer was nearly planarized. Estimates based on photoluminescence intensity variation and the characteristics of the fabricated p-i-n photodiode indicate that little damage was incurred during the process. These results indicate that fabrication of planar OEICs by means of this process is feasible.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical workshop techniques; p-i-n diodes; photodiodes; sputter etching; 5.3 to 0.6 micron; InP-InGaAs; OEICs; etched back planar process; groove depth; nonselective reactive ion beam etching; optoelectronic integrated circuits; p-i-n photodiodes; photoluminescence intensity variation; photoresist; planar InP-InGaAs embedded p-i-n photodiode; semiconductor layers; Epitaxial layers; Etching; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Ion beams; Optical device fabrication; Optoelectronic devices; Resists; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60771

Filename

60771