Title :
Fabrication of very high resistivity Si with low loss and cross talk
Author :
Wu, Y.H. ; Chin, A. ; Shih, K.H. ; Wu, C.C. ; Liao, C.P. ; Pai, S.C. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We have used proton and As/sup +/ implantation to increase the resistivity of conventional Si (10 /spl Omega/-cm) and Si-on-quartz substrates, respectively. A high resistivity of 1.6 M/spl Omega/-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast /spl sim/1 ps carrier lifetime stable even after a 400/spl deg/C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 /spl Aring/ oxides.
Keywords :
Annealing; Carrier lifetime; Coplanar transmission lines; Coupled transmission lines; Crosstalk; Electric breakdown; Electrical resistivity; Elemental semiconductors; Ion implantation; Leakage currents; Losses; MMIC; MOS capacitors; Microwave materials; Silicon; Substrates; 1 ps; 1.6 Mohmcm; 20 GHz; 30 angstrom; 400 C; As/sup +/ implantation; MOS capacitors; Si; Si substrates; Si-SiO/sub 2/; Si-on-quartz substrates; annealing; charge-to-breakdown; coplanar transmission lines; coupled transmission lines; cross coupling; extremely fast carrier lifetime; gate oxide integrity; low cross talk; low loss; proton implantation; rf performance; stress-induced leakage current; transmission line loss; very high resistivity Si fabrication; Annealing; Charge carrier lifetime; Conductivity; Couplings; Fabrication; Gallium arsenide; Implants; Loss measurement; Power transmission lines; Protons;
Journal_Title :
Electron Device Letters, IEEE
