Title :
High channel density dual operation mode MOS-controlled thyristor with superior current saturation capability
Author :
You, Budong ; Temple, V.A.K. ; Huang, Alex Q. ; Holroyd, Forrest
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A 1200-V dual operation mode MCT with low on state voltage drop, high turn-off current and superior current saturation capability has been developed. The dual operation mode MCT overcomes the tradeoff between the on-state voltage drop and the current saturation capability of the conventional IGBT operation by working in a thyristor mode in the on state and in an IGBT mode during the switching transient. This letter reports the device development and demonstrates how the dual operation mode MCT can be beneficial in switching circuit applications.
Keywords :
Current density; Electric potential; MOS-controlled thyristors; Power semiconductor switches; Semiconductor device breakdown; Semiconductor device testing; Switching transients; 1200 V; IGBT mode; current saturation capability; dual operation mode MCT; high channel density dual operation mode MOS-controlled thyristor; high turn-off current; low on state voltage drop; switching circuit applications; switching transient; thyristor mode; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Protection; Silicon compounds; Switches; Switching circuits; Testing; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
