DocumentCode
137393
Title
A 3.2-GHz 1.3-mW ILO phase rotator for burst-mode mobile memory I/O in 28-nm low-leakage CMOS
Author
Aleksic, Marko
Author_Institution
Rambus Inc., Sunnyvale, CA, USA
fYear
2014
fDate
22-26 Sept. 2014
Firstpage
451
Lastpage
454
Abstract
This paper presents a 7-bit 3.2-GHz injection-locked oscillator (ILO) based phase rotator for burst-mode mobile memory I/O. Phase shifting is achieved by selecting the injection point and offsetting the natural frequency of the ILO from that of the injected clock. The circuit implements two techniques that enable its use in burst-mode systems: 1) synchronous stopping and restarting of the ILO achieved by strong injection, as opposed to a relatively weak injection during normal operation, and 2) phase characteristic calibration that allows continuous, infinite-throw phase rotation needed for link timing calibration. The circuit is implemented in a 1-V low-leakage 28-nm CMOS process. Power consumption and area are 1.3 mW and 0.03 mm2.
Keywords
CMOS memory circuits; MMIC oscillators; MMIC phase shifters; field effect MMIC; injection locked oscillators; ILO phase rotator; burst-mode mobile memory I/O; continuous infinite-throw phase rotation; frequency 3.2 GHz; injected clock; injection point selection; injection-locked oscillator; link timing calibration; low-leakage CMOS; low-leakage CMOS process; natural frequency; phase characteristic calibration; phase shifters; phase shifting; power 1.3 mW; synchronous stopping; voltage 1 V; word length 7 bit; CMOS integrated circuits; Calibration; Clocks; Mobile communication; Phase locked loops; Regulators; Tuning; injection-locked oscillators; phase shifters;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th
Conference_Location
Venice Lido
ISSN
1930-8833
Print_ISBN
978-1-4799-5694-4
Type
conf
DOI
10.1109/ESSCIRC.2014.6942119
Filename
6942119
Link To Document