DocumentCode :
1374181
Title :
10-GHz Mode-Locked Extended Cavity Laser Integrated With Surface-Etched DBR Fabricated by Quantum-Well Intermixing
Author :
Hou, Lianping ; Haji, Mohsin ; Dylewicz, Rafal ; Qiu, Bocang ; Bryce, A. Catrina
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Volume :
23
Issue :
2
fYear :
2011
Firstpage :
82
Lastpage :
84
Abstract :
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss gratings with accurate wavelength control. The lasers produce 2.99-ps sech2-pulses with a time-bandwidth product (TBP) of 0.51.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser mode locking; light absorption; optical fabrication; optical losses; quantum well lasers; AlGaInAs-InP; frequency 10 GHz; low-absorption loss gratings; optical fabrication; optimized surface-etched distributed Bragg mirror; passively mode-locked extended cavity laser; quantum-well intermixing process; surface-etched DBR; time-bandwidth product; wavelength 1.55 mum; Cavity resonators; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Surface emitting lasers; Waveguide lasers; Mode-locked laser; monolithic integrated circuits; quantum-well intermixing (QWI); surface-etched Bragg gratings;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2091121
Filename :
5628258
Link To Document :
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