10-GHz Mode-Locked Extended Cavity Laser Integrated With Surface-Etched DBR Fabricated by Quantum-Well Intermixing

Author

Hou, Lianping ; Haji, Mohsin ; Dylewicz, Rafal ; Qiu, Bocang ; Bryce, A. Catrina

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

23

Issue

2

fYear

2011

Firstpage

82

Lastpage

84

Abstract

The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss gratings with accurate wavelength control. The lasers produce 2.99-ps sech²-pulses with a time-bandwidth product (TBP) of 0.51.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser mode locking; light absorption; optical fabrication; optical losses; quantum well lasers; AlGaInAs-InP; frequency 10 GHz; low-absorption loss gratings; optical fabrication; optimized surface-etched distributed Bragg mirror; passively mode-locked extended cavity laser; quantum-well intermixing process; surface-etched DBR; time-bandwidth product; wavelength 1.55 mum; Cavity resonators; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Surface emitting lasers; Waveguide lasers; Mode-locked laser; monolithic integrated circuits; quantum-well intermixing (QWI); surface-etched Bragg gratings;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2091121

Filename

5628258