• DocumentCode
    1374330
  • Title

    Ferroelectric materials as storage elements for digital computers and switching systems

  • Author

    Anderson, J. R.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    71
  • Issue
    6
  • fYear
    1953
  • Firstpage
    395
  • Lastpage
    401
  • Abstract
    THE growing need for improved types of data storage systems in both the digital computer and telephone switching fields has led to the investigation of ferroelectric materials as memory devices. Among the objectives in developing these devices have been low power consumption while storing or reading out information, memory access times of 1 microsecond or less, small size per bit of memory, simplified low cost construction, and high reliability. This paper presents an explanation of the operation of a basic storage circuit employing a ferroelectric material, requirements for suitable materials, descriptions of several types of circuits employing ferroelectrics, and experimental data obtained with operating circuits.
  • Keywords
    Barium; Capacitance; Capacitors; Crystals; Ferroelectric materials; Hysteresis;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1953.6371953
  • Filename
    6371953