DocumentCode
1374330
Title
Ferroelectric materials as storage elements for digital computers and switching systems
Author
Anderson, J. R.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume
71
Issue
6
fYear
1953
Firstpage
395
Lastpage
401
Abstract
THE growing need for improved types of data storage systems in both the digital computer and telephone switching fields has led to the investigation of ferroelectric materials as memory devices. Among the objectives in developing these devices have been low power consumption while storing or reading out information, memory access times of 1 microsecond or less, small size per bit of memory, simplified low cost construction, and high reliability. This paper presents an explanation of the operation of a basic storage circuit employing a ferroelectric material, requirements for suitable materials, descriptions of several types of circuits employing ferroelectrics, and experimental data obtained with operating circuits.
Keywords
Barium; Capacitance; Capacitors; Crystals; Ferroelectric materials; Hysteresis;
fLanguage
English
Journal_Title
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher
ieee
ISSN
0097-2452
Type
jour
DOI
10.1109/TCE.1953.6371953
Filename
6371953
Link To Document