High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent- $\hbox {Si}_{3}\hbox {N}_{4}$ -Thickness Trapping Layer

We made the MoN-[SiO₂- LaAlO₃]-[Ge-HfON]- [LaAlO₃-SiO₂]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si₃N₄-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 ^°C, and a 3.6-V endurance window at 10⁶ cycles, under very fast 100 μs and low ±16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.