Gate coupling and floating-body effects in thin-film SOI MOSFETs

Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage