• DocumentCode
    1374565
  • Title

    Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

  • Author

    Kuboyama, Satoshi ; Maru, Akifumi ; Shindou, Hiroyuki ; Ikeda, Naomi ; Hirao, Toshio ; Abe, Hiroshi ; Tamura, Takashi

  • Author_Institution
    Japan Aerosp. Exploration Agency, Tsukuba, Japan
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2734
  • Lastpage
    2738
  • Abstract
    It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ion beam effects; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; SiC devices; heavy ions; permanent damage; single-event damages; transistor structure; Aluminum gallium nitride; Gallium nitride; HEMTs; Ions; Leakage current; Logic gates; AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2171504
  • Filename
    6078447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1374565