Temperature dependence of gain saturation in multilevel quantum dot lasers

Author

Park, Gyoungwon ; Shchekin, Oleg B. ; Deppe, Dennis G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

36

Issue

9

fYear

2000

Firstpage

1065

Lastpage

1071

Abstract

The temperature dependence of quantum dot (QD) optical gain is analyzed using a multilevel model and compared with experiment. The maximum gain is found to have a surprisingly strong temperature dependence that causes level switching and can limit laser performance in QD lasers. The model based on multiple discrete levels elucidates general design criteria that should be satisfied to obtain a stable threshold versus temperature in QD lasers. Good agreement is obtained between calculations and experiment for level switching in 1.3-/spl mu/m QD lasers.

Keywords

laser theory; optical saturation; quantum well lasers; semiconductor device models; semiconductor quantum dots; thermo-optical effects; 1.3 mum; gain saturation; general design criteria; laser performance; level switching; maximum gain; multilevel quantum dot lasers; multiple discrete levels; quantum dot optical gain; stable threshold; strong temperature dependence; temperature dependence; Atomic force microscopy; Energy states; Indium gallium arsenide; Land surface temperature; Laser modes; Laser theory; Quantum dot lasers; Semiconductor lasers; Temperature dependence; US Department of Transportation;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.863959

Filename

863959