• DocumentCode
    1375196
  • Title

    TEM observation of GaAs/GaAlAs laser diodes degraded in field operation

  • Author

    Magistrali, F. ; Sala, D. ; Vonzi, M. ; Fantini, F. ; Corticelli, F. ; Migligori, A.

  • Author_Institution
    Telettra, Vimercate, Italy
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    Cross-section TEM analysis was applied to the dice of degraded DH GaAs/GaAlAs oxide-stripe laser diodes to enable a deeper understanding of the origin of chip-related failures in the field operation. The technique enabled the growth of dislocation loops confined inside the active layer to be identified as the failure mechanism responsible for the degradation.
  • Keywords
    III-V semiconductors; aluminium compounds; dislocation loops; failure analysis; gallium arsenide; life testing; reliability; semiconductor junction lasers; transmission electron microscope examination of materials; GaAs-GaAlAs; TEM observation; cross-section TEM analysis; degradation; degraded diodes; failure mechanism; field operation; growth of dislocation loops; laser diodes; origin of chip-related failures; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910037
  • Filename
    60801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1375196