DocumentCode :
1375230
Title :
Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device
Author :
Kim, Sungho ; Choi, Sung-Jin ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume :
32
Issue :
1
fYear :
2011
Firstpage :
84
Lastpage :
86
Abstract :
An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.
Keywords :
MOSFET; carrier density; charge pump circuits; interface states; phototransistors; silicon-on-insulator; drain current; floating-body device; interface-trap analysis; light illumination; majority-carrier concentration; optically assisted charge-pumping technique; pulse waveform; Charge pumps; Logic gates; Optical device fabrication; Optical pulses; Optical variables measurement; Transient analysis; Charge pumping; floating-body (FB); interface trap; silicon-on-insulator MOS field-effect transistor (FET);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2084561
Filename :
5629429
Link To Document :
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