High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba_1.2Ti_0.8O₃) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm² · V^-1 · s^-1, a low threshold voltage of -1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJ · m^-2, which leads to Stranski-Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs.