DocumentCode :
1375415
Title :
Power-Combining Class-E Amplifier With Finite Choke
Author :
Thian, Mury ; Fusco, Vincent ; Gardner, Peter
Author_Institution :
Queen´´s Univ. of Belfast, Belfast, UK
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
451
Lastpage :
457
Abstract :
A recently introduced power-combining scheme for a Class-E amplifier is, for the first time, experimentally validated in this paper. A small value choke of 2.2 nH was used to substitute for the massive dc-feed inductance required in the classic Class-E circuit. The power-combining amplifier presented, which operates from a 3.2-V dc supply voltage, is shown to be able to deliver a 24-dBm output power and a 9.5-dB gain, with 64% drain efficiency and 57% power-added efficiency at 2.4 GHz. The power amplifier exhibits a 350-MHz bandwidth within which a drain efficiency that is better than 60% and an output power that is higher than 22 dBm were measured. In addition, by adopting three-harmonic termination strategy, excellent second- and third-harmonic suppression levels of 50 and 46 dBc, respectively, were obtained. The complete design cycle from analysis through fabrication to characterization is explained.
Keywords :
III-V semiconductors; baluns; gallium arsenide; inductance; power amplifiers; GaAs; class-e amplifier; dc supply voltage; drain efficiency; finite choke; gain 9.5 dB; massive dc-feed inductance; output power; power added efficiency; power combining; second-harmonic suppression; third-harmonic suppression; three harmonic termination strategy; voltage 3.2 V; Balun; Class-E; GaAs MESFET; finite choke; harmonic suppression; high efficiency; power amplifier (PA); power combiner; switching amplifier; transformer; transistor circuits; transmission line;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2010.2072250
Filename :
5629458
Link To Document :
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