Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate

Author

Wang, G. ; Soga, T. ; Egawa, T. ; Jimbo, T. ; Umeno, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

Volume

36

Issue

17

fYear

2000

fDate

8/17/2000 12:00:00 AM

Firstpage

1462

Lastpage

1464

Abstract

The effect of hydrogen (H) plasma passivation on a vertical-cavity surface-emitting laser (VCSEL) structure consisting of an active layer of Al_0.3Ga_0.7As/GaAs multi-quantum-well (MQW) grown on an Si substrate is investigated by photoluminescence (PL) measurement. Significant spontaneous emission enhancement is observed at the cavity mode for the H-plasma-passivated sample. This is attributed to the increased MQW PL emission resulting from the incorporation of hydrogen atoms which passivated the electrical activity of the defects-related nonradiative deep centres and increased the minority carrier lifetime

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; dislocation density; gallium arsenide; laser beams; laser cavity resonators; laser modes; minority carriers; passivation; photoluminescence; plasma materials processing; quantum well lasers; spontaneous emission; surface emitting lasers; Al_0.3Ga_0.7As-GaAs; Al_0.3Ga_0.7As/GaAs; H plasma passivation; H-plasma-passivated sample; Si; Si substrate; active layer; cavity mode; defects-related nonradiative deep centres; electrical activity; enhanced spontaneous emission; minority carrier lifetime; multi-quantum-well laser; photoluminescence measurement; spontaneous emission enhancement; vertical-cavity surface-emitting laser structure; vertical-cavity surface-emitting laser structures;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001055

Filename

865038