Title :
780 nm AlGaAs DFB lasers fabricated by MOCVD
Author :
Hirata, Shinnosuke ; Narui, H. ; Kumagai, Osamu
Author_Institution :
Sony Corp. Res. Centre, Yokohama
fDate :
2/18/1988 12:00:00 AM
Abstract :
Continuous single mode oscillation was obtained in AlGaAs DFB lasers operating at approximately 780 nm at room temperature DFB lasers have a low threshold current of about 25 mA and can be operated at an output level of up to 10 mW in stable, single longitudinal mode
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; laser transitions; optical waveguides; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 10 mW; 25 mA; 780 nm; AlGaAs-GaAs; DFB lasers; MOCVD; low threshold current; rib waveguide SCH type; room temperature; semiconductor lasers; single longitudinal mode; stable continuous single mode operation;
Journal_Title :
Electronics Letters
