DocumentCode
1375560
Title
780 nm AlGaAs DFB lasers fabricated by MOCVD
Author
Hirata, Shinnosuke ; Narui, H. ; Kumagai, Osamu
Author_Institution
Sony Corp. Res. Centre, Yokohama
Volume
24
Issue
4
fYear
1988
fDate
2/18/1988 12:00:00 AM
Firstpage
239
Lastpage
240
Abstract
Continuous single mode oscillation was obtained in AlGaAs DFB lasers operating at approximately 780 nm at room temperature DFB lasers have a low threshold current of about 25 mA and can be operated at an output level of up to 10 mW in stable, single longitudinal mode
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; laser transitions; optical waveguides; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 10 mW; 25 mA; 780 nm; AlGaAs-GaAs; DFB lasers; MOCVD; low threshold current; rib waveguide SCH type; room temperature; semiconductor lasers; single longitudinal mode; stable continuous single mode operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5630
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