Title :
Demonstration of 4H-SiC power bipolar junction transistors
Author :
Luo, Y. ; Fursin, L. ; Zhao, J.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
8/17/2000 12:00:00 AM
Abstract :
The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250°C of the fabricated bipolar junction transistors are measured and reported
Keywords :
high-temperature electronics; power bipolar transistors; semiconductor materials; silicon compounds; wide band gap semiconductors; 20 degC; 250 degC; DC I-V characteristic; SiC; device structure; high-temperature electronics; multi-step junction termination extension design; power bipolar junction transistors; wide-bandgap materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001059
