Title :
Time-domain nonlinear HBT model including non-quasi-static effects
Author :
Ouslimani, A. ; Hafdallah, H. ; Gaubert, J. ; Medjnoun, M.
fDate :
8/17/2000 12:00:00 AM
Abstract :
A nonlinear transient HBT model is proposed. Base push-out and non-quasi-static (NQS) effects are included. Picosecond off-on/on-off time-domain simulations agree well with the measurements
Keywords :
heterojunction bipolar transistors; semiconductor device models; time-domain analysis; transient analysis; HBT; base push-out effects; non-quasi-static effects; picosecond off-on/on-off time-domain simulations; time-domain nonlinear model; transient model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001054
