DocumentCode
1375792
Title
Super low noise HEMT using focused ion beam lithography
Author
Nagahama, Kazuhiro ; Nakanishi, Masaki ; Sasaki, Yutaka ; Hosono, Keita ; Morimoto, Hiroaki ; Katoh, T. ; Hirano, R. ; Murotani
Author_Institution
Mitsubishi Electr. Corp., Hyogo
Volume
24
Issue
4
fYear
1988
fDate
2/18/1988 12:00:00 AM
Firstpage
242
Lastpage
243
Abstract
Focused ion beam lithography is applied for the first time to low noise HEMTs for delineating a mushroom shaped quarter micron gate. The very low noise performance obtained, which is of 0.68 and 0.83 dB minimum noise figure at 12 and 18 GHz respectively, shows that focused ion beam lithography is very promising for super low noise HEMT applications
Keywords
high electron mobility transistors; ion beam lithography; solid-state microwave devices; 0.68 to 0.83 dB; 12 to 18 GHz; MODFET; SHF; fabrication; focused ion beam lithography; high electron mobility transistor; low noise HEMT; mushroom shaped; quarter micron gate; solid state microwave devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5632
Link To Document