DocumentCode :
1375799
Title :
Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors
Author :
Towe, Elias ; Pan, Dong
Author_Institution :
Lab. for Opt. & Quantum Electron., Virginia Univ., Charlottesville, VA, USA
Volume :
6
Issue :
3
fYear :
2000
Firstpage :
408
Lastpage :
421
Abstract :
Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. Fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the active regions of a new class of electronic and optoelectronic devices with novel functionalities. This paper reviews the state-of-the-art in the use of these objects in infrared detectors. It describes the progress, challenges, and projections for continued development of normal-incidence intersublevel detectors operating in the spectral region between 6 and 20 /spl mu/m.
Keywords :
Infrared detectors; Photodetectors; Quantum well devices; Reviews; Semiconductor quantum dots; 6 to 20 mum; infrared photodetectors; normal-incidence intersublevel detectors; quantum mechanics; self assembled dots; semiconductor quantum-dot nanostructures; Electromagnetic radiation; Infrared detectors; Optical sensors; Photodetectors; Quantum cascade lasers; Quantum dots; Quantum mechanics; Semiconductor materials; Semiconductor nanostructures; Temperature;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.865096
Filename :
865096
Link To Document :
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