Title :
Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors
Author :
Towe, Elias ; Pan, Dong
Author_Institution :
Lab. for Opt. & Quantum Electron., Virginia Univ., Charlottesville, VA, USA
Abstract :
Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. Fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the active regions of a new class of electronic and optoelectronic devices with novel functionalities. This paper reviews the state-of-the-art in the use of these objects in infrared detectors. It describes the progress, challenges, and projections for continued development of normal-incidence intersublevel detectors operating in the spectral region between 6 and 20 /spl mu/m.
Keywords :
Infrared detectors; Photodetectors; Quantum well devices; Reviews; Semiconductor quantum dots; 6 to 20 mum; infrared photodetectors; normal-incidence intersublevel detectors; quantum mechanics; self assembled dots; semiconductor quantum-dot nanostructures; Electromagnetic radiation; Infrared detectors; Optical sensors; Photodetectors; Quantum cascade lasers; Quantum dots; Quantum mechanics; Semiconductor materials; Semiconductor nanostructures; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.865096