DocumentCode :
1375850
Title :
Intersubband quantum-box semiconductor lasers
Author :
Hsu, Chia-Fu ; Jeong-Seok, O. ; Zory, Peter ; Botez, Dan
Author_Institution :
Lucent Technol., Breinigsville, PA, USA
Volume :
6
Issue :
3
fYear :
2000
Firstpage :
491
Lastpage :
503
Abstract :
It is shown that semiconductor lasers utilizing intersubband transitions in quantum boxes, so-called intersubband quantum-box (IQB) lasers, can have significantly lower threshold current densities and operating voltages than quantum cascade (QC) lasers. In order to achieve this result, an enhancement factor of about 20 in the LO-phonon-assisted electron relaxation time is necessary. The increased gain for the radiative stage in an IQB laser eliminates the need for a multiradiative-stage structure (typically 25 stages in QC lasers). In turn, the electron injector and Bragg mirror regions on either side of the active region can be separately optimized. Due to their inherently lower input power requirements, IQB lasers operating in the mid-IR wavelength range should be capable of higher average-output powers than QC lasers at all temperatures. Furthermore, continuous-wave (CW) operation at room temperature with high wallplug efficiency becomes possible.
Keywords :
Current density; Electron relaxation time; Electron-phonon interactions; Quantum well lasers; Semiconductor quantum dots; Bragg mirror regions; CW operation; LO-phonon-assisted electron relaxation time; active region; average-output powers; electron injector; enhancement factor; gain; high wallplug efficiency; input power requirements; intersubband quantum-box semiconductor lasers; intersubband transitions; mid-IR wavelength range; multiradiative-stage structure; operating voltages; radiative stage; room temperature; threshold current densities; Electrons; Laser transitions; Mirrors; Optical pulses; Power lasers; Quantum cascade lasers; Quantum dot lasers; Semiconductor lasers; Temperature distribution; Waveguide lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.865104
Filename :
865104
Link To Document :
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