Title :
Procedure for inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves
Author :
Mahon, S.J. ; Skellern, D.J.
Author_Institution :
Macquarie Univ., NSW, Australia
Abstract :
A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported. This procedure allows important structural parameters, including the aluminium fraction, dopant density, dopant layer thickness, physical gate length and source resistance to be accurately obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Al fraction; DC I/V characteristic curves; GaAs-AlGaAs structures; HEMT structures; III-V semiconductors; dopant density; dopant layer thickness; inverse modelling; physical gate length; source resistance; structural parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910052
