Title :
Electron mobility and deep level trap profiles of MBE GaAs on Si MESFETs
Author :
Goostray, J. ; Thomas, H. ; Dumas, J.M. ; Hatzopolos, Z. ; Warner, D.
Author_Institution :
Univ. of Wales Coll. of Cardiff, UK
Abstract :
Low field electron mobility and deep trap profiles have been determined for 0.7 mu m gate length GaAs on Si MESFETs. The peak mobility at 300 K is 3600 cm2/V s, and the dominant trap has been identified as EL2 (Ea 0.83 eV), with a concentration of 2-6*1014 cm-3. The comparison of these profiles with those of GaAs/GaAs MESFETs has been used to assess the electrical effects of growth on a silicon substrate.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; deep level transient spectroscopy; deep levels; gallium arsenide; molecular beam epitaxial growth; silicon; DLTS; GaAs-Si structure; III-V semiconductor; MBE layer; MESFET; Si substrate; deep level trap profiles; electron mobility; elemental semiconductor; peak mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910054
