• DocumentCode
    1376382
  • Title

    0.12-μm gate III-V nitride HFET´s with high contact resistances

  • Author

    Burm, J. ; Chu, K. ; Schaff, W.J. ; Eastman, L.F. ; Khan, Muhammad Asad ; Qisheng Chen ; Yang, J.W. ; Shur, M.S.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    18
  • Issue
    4
  • fYear
    1997
  • fDate
    4/1/1997 12:00:00 AM
  • Firstpage
    141
  • Lastpage
    143
  • Abstract
    HFET´s with 0.12-μm gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, fT of 46.9 GHz and fmax of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 μm). In addition, the effects of high contact resistances at high frequency are discussed.
  • Keywords
    contact resistance; frequency response; millimetre wave field effect transistors; ohmic contacts; 0.12 micron; 103 GHz; 46.9 GHz; III-V nitride HFET; III-V nitride wafer; Ti-Au; Ti/Au ohmic contact; frequency response; high contact resistances; Annealing; Contact resistance; Electrical resistance measurement; Gallium nitride; Gold; HEMTs; III-V semiconductor materials; MODFETs; Monitoring; Ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.563309
  • Filename
    563309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1376382