Title :
0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth
Author :
Schimpf, K. ; Sommer, Martin ; Horstmann, M. ; Hollfelder, M. ; van der Hart, A. ; Marso, M. ; Kordos, P. ; Luth, H.
Author_Institution :
Res. Centre Julich, Germany
fDate :
4/1/1997 12:00:00 AM
Abstract :
We report on the DC and RF performance of HEMTs based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated. We demonstrate that optimum DC and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT=160 GHz and fmax=260 GHz for a 0.1-μm T-gate device indicate the suitability of our devices for W-band applications.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; vapour phase epitaxial growth; 0.1 micron; 0.1-/spl mu/m T-gate; 160 GHz; 260 GHz; Al-free material system; DC performance; InP-InGaAs-InP; InP/InGaAs/InP pHEMT; LP-MOCVD growth; N carrier; RF performance; T-gate PHEMT; W-band applications; channel composition; gate length; highly strained channels; pseudomorphic HEMT; Chemicals; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; Nitrogen; Radio frequency; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
