DocumentCode
1376408
Title
High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO2 using WSi as the base electrode
Author
Oka, T. ; Ouchi, K. ; Uchiyama, H. ; Taniguchi, Takafumi ; Mochizuki, K. ; Nakamura, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
18
Issue
4
fYear
1997
fDate
4/1/1997 12:00:00 AM
Firstpage
154
Lastpage
156
Abstract
High-speed InGaP/GaAs heterojunction bipolar transistors (HBT´s) with a small emitter area are described. WSi is used as the base electrode to fabricate HBT´s with a narrow base contact width and a buried SiO2 structure. An HBT with an emitter area of 0.8×5 μm exhibited an fT of 105 GHz and an fmax of 120 GHz. These high values are obtained due to the reduction of C/sub BC/ by using buried SiO2 with a narrow base contact width, indicating the great potential of GaAs HBT´s for high-speed and low-power circuit applications.
Keywords
III-V semiconductors; buried layers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device metallisation; 105 GHz; 120 GHz; InGaP-GaAs; SiO/sub 2/; WSi; WSi base electrode; buried SiO/sub 2/ structure; heterojunction bipolar transistors; high-speed HBT; low-power circuit applications; small emitter area; Bipolar transistors; Electrodes; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Parasitic capacitance; Passivation; Plasma applications; Sputter etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.563313
Filename
563313
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